Designer Materials for Next Generation Electronics: Studying Complex Oxides using Inverse Photoemission Spectroscopy
Understanding the properties of complex oxides and their physical origins is key to utilizing their unique properties in technical applications. These properties include high-temperature superconductivity, metal-insulator transitions, and many more that make them ideal candidates for the generation of electronics. In this project, my collaborator and I design and have begun construction on an momentum (K)-resolved inverse photoemission spectroscopy system (KRIPES) which will be used to study to behavior of electrons in these fascinating materials. The KRIPES system will specifically study the structure of unfilled electronic bands and thus the nature of electronic excitations in complex oxides, of which there is a significant gap in existing experimental data. We are in a collaboration with the Schlom group at Cornell, which specializes in the growth of high-quality, atomically-precise complex oxide films. Through growing and characterizing a variety of materials with different properties, we hope to gain a fuller understanding of the physics that leads to the many useful properties in complex oxides and be able to control them.